Electronic Materials Production Processes

Acquaintance with the specifics of Chemical and Physical processes used in microelectronics processing (CVD, PVD, MBE, Sputtering, PECVD, Etching) using the fabrication of Silicon IC’s as a paradigm.

Objectives

Application of reactor design and transport phenomena in the microscopic processing steps of IC fabrication.

Prerequisites

Chemical kinetics, reactor design and transport phenomena

Syllabus

Introduction. Integrated Circuits (IC). Semiconductors and charge carriers, basic relationships. Elementary IC units, diodes and transistors, device physics and operation. Outline of IC production: from sand to IC’s. Metallurgical Grade Silicon production. Silicon refining, Electronic Grade Silicon. Production and refinement of chlorosilanes. Deposition of polycrystalline silicon: Siemens, fluidized bed. Crystal Growth. Czochralski (CZ), Bridgeman and floating zone methods. Overview of CZ, axial and radial distribution of dopants and oxygen. Chemical Processes. Chemical Vapor Deposition (CVD). Surface diffusion and epitaxial growth. Homogeneous and heterogeneous reactions and deposition kinetics. CVD reactors. Flow and heat regimes, reactor design. Doping. Incorporation and transport of dopants. Diffusion in solids, redistribution of dopants. Lithography. Basic principles and techniques. Resists and resist development. Physical and Physicochemical Processes. Evaporation (PVD) and Molecular Beam Epitaxy (MBE). Plasma Processing. Sputtering (dc, rf), sputtering rates and deposition rate. Plasma Enhanced Chemical Vapor Deposition (PECVD). Plasma Etching. PVD and Plasma reactors: specifics, electrical characteristics and design considerations. Keywords: Microelectronics Processing, Czochralski, CVD, PVD, PECVD, Plasma etching